| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| AO4403/AO4407/AO4409/AO4435 | MOS(场效应管) |
MTW/美台微 |
SOP8 |
2025+ |
30000 |
|||
| AO4882/AO4884/AO4428/AO4438 | MOS(场效应管) |
AOS/万代 |
SOP8 |
2025+ |
150000 |
|||
| AO4402/AO4406/AO4410/AO4430 | MOS(场效应管) |
MTW/美台微 |
SOP8 |
2025+ |
30000 |
|||
| AO4812/AO4822/AO4832/AO4842 | MOS(场效应管) |
AOS/万代 |
SOP08 |
2025+ |
60000 |
|||
| 2N10/3N10/5N10/5N06 | MOS(场效应管) |
MTW/美台微 |
SOT23/SOT23-3L |
2025+ |
150000 |
|||
| SI9435/SI4953/AO9926/8205 | MOS(场效应管) |
MTW/美台微 |
SOP8 |
2025+ |
30000 |
|||
| SI2300/SI2302/SI2304/SI2306/SI2310 | MOS(场效应管) |
MTW/美台微 |
SOT-23/SOT23-3 |
2025+ |
150000 |
|||
| CJX3139K/CJX3134K/CJ3134K/CJ3139K | MOS(场效应管) |
CJ/长晶 |
SOT-563/SOT723 |
2025+ |
30000 |
|||
| 15N10/20N10/30N10/40N10/50N10 | MOS(场效应管) |
MTW/美台微 |
TO-252/PDFN3*3/5*6 |
2025+ |
60000 |
|||
| 30N04/50N04/80N04/100N04 | MOS(场效应管) |
MTW/美台微 |
TO-252/PDFN3*3/5*6 |
2025+ |
60000 |
|||
| 30P03/50P03/60P03/80P03/100P03 | 低压MOS管 |
MTW/美台微 |
TO252/PDFN3*3/5*6 |
2025+ |
150000 |
|||
| 30N06/50N06/80N06/100N06 | MOS(场效应管) |
MTW/美台微 |
TO-252/PDFN3*3/5*6 |
2025+ |
60000 |
|||
| 10P10/20P10/30P10/40P10 | MOS(场效应管) |
MTW/美台微 |
TO252/PDFN3*3/5*6 |
2025+ |
15000 |
|||
| AO3400/AO3404/AO3406/AO3416 | MOS(场效应管) |
AOS/万代 |
SOT23/SOT23-3L |
2025+ |
150000 |
|||
| HT7530/HT7544/HT7550/HT7150 | 稳压IC |
MTW/美台微 |
SOT89/SOT23 |
2024+ |
300000 |
|||
| AD623ARZ | IC |
ADI/亚德诺 |
SOP8 |
2022+ |
2500 |
|||
| AO3401/AO3407/AO3415/AO3423 | MOS(场效应管) |
AOS/万代 |
SOT23/SOT-23-3L |
2025+ |
150000 |
|||
| AOD407/AOD409/AOD442/AOD444 | MOS(场效应管) |
AOS/万代 |
TO-252 |
2025+ |
15000 |
|||
| FDC6301N/FDC6401N/FDC6327 | MOS(场效应管) |
ONSEMI/安森美 |
SOT23-6 |
2025+ |
90000 |
|||
| 30N02/60N02/80N02/100N02 | MOS(场效应管) |
MTW/美台微 |
TO252/PDFN3*3/5*6 |
2025+ |
150000 |
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